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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E AS
I AS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 15 V, I D = 66 A
67
66
mJ
A
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A,Referenced to 25 ° C
26
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
1
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
1
1.8
3
V
? V GS(th )
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A,Referenced to 25 ° C
–5
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS
V GS
V GS
= 10 V, I D = 15 A
= 4.5 V, I D = 13 A
= 10 V, I D = 15 A,T J =125 ° C
6.3
7.9
9.5
8
10
13
m ?
I D(on)
On–State Drain Current
V GS
= 10 V,
V DS = 5 V
50
A
g FS
Forward Transconductance
V DS = 10 V,
I D = 15 A
60
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
1755
430
180
1.3
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
11
20
ns
t r
t d(off)
t f
Q g
Q g s
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 15 A,
12
29
19
16
4.6
21
47
34
22
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
6.2
nC
FDD6670A Rev. E1(W)
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相关代理商/技术参数
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FDD6670A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 66A, TO-252
FDD6670A_05 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDD6670A_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
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